We present results on electrically driven nanobeam photonic crystal cavitiesformed out of a lateral p-i-n junction in gallium arsenide. Despite their smallconducting dimensions, nanobeams have robust electrical properties with highcurrent densities possible at low drive powers. Much like their two-dimensionalcounterparts, the nanobeam cavities exhibit bright electroluminescence at roomtemperature from embedded 1,250 nm InAs quantum dots. A small room temperaturedifferential gain is observed in the cavities with minor beam self-heatingsuggesting that lasing is possible. These results open the door for efficientelectrical control of active nanobeam cavities for diverse nanophotonicapplications.
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